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Electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes: FFT-impedance spectroscopy of the growth process and magnetic properties

机译:超高长宽比InP膜中Co纳米线的电化学生长:生长过程和磁性能的FFT-阻抗谱

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摘要

The electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes has been investigated by fast Fourier transform-impedance spectroscopy (FFT-IS) in the frequency range from 75 Hz to 18.5 kHz. The impedance data could be fitted very well using an electric circuit equivalent model with a series resistance connected in series to a simple resistor-capacitor (RC) element and a Maxwell element. Based on the impedance data, the Co deposition in ultra-high aspect ratio InP membranes can be divided into two different Co deposition processes. The corresponding share of each process on the overall Co deposition can be determined directly from the transfer resistances of the two processes. The impedance data clearly show the beneficial impact of boric acid on the Co deposition and also indicate a diffusion limitation of boric acid in ultra-high aspect ratio InP membranes. The grown Co nanowires are polycrystalline with a very small grain size. They show a narrow hysteresis loop with a preferential orientation of the easy magnetization direction along the long nanowire axis due to the arising shape anisotropy of the Co nanowires.
机译:通过快速傅立叶变换阻抗谱(FFT-IS)在75Hz至18.5kHz的频率范围内研究了超高长宽比InP膜中Co纳米线的电化学生长。使用具有等效串联电阻的电路等效模型,该电阻数据可以很好地拟合,该串联电阻串联到简单的电阻器(RC)元件和Maxwell元件。基于阻抗数据,可以将超高深宽比InP膜中的Co沉积分为两个不同的Co沉积过程。每个过程在整个Co沉积上的相应份额可以直接从两个过程的转移阻力中确定。阻抗数据清楚地表明了硼酸对Co沉积的有益影响,并且还表明了硼酸在超高深宽比InP膜中的扩散限制。生长的钴纳米线是具有非常小的晶粒尺寸的多晶。由于Co纳米线的形状各向异性,它们显示出窄的磁滞回线,沿着长纳米线轴具有容易磁化方向的优先取向。

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