首页> 外文会议>Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials >MOVPE growth and optical properties of wurtzite InP nanowires with radial InP/InAsP quantum wells
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MOVPE growth and optical properties of wurtzite InP nanowires with radial InP/InAsP quantum wells

机译:具有径向InP / InAsP量子阱的纤锌矿InP纳米线的MOVPE生长和光学性质

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摘要

MOVPE growth and optical properties of wurtzite (WZ) InP nanowires (NWs) with radial InAsP/InP quantum wells (QWs) were investigated. InAsP QWs with a pure WZ crystal phase structure were grown using pure WZ-InP NW cores with the crystalline structure controlled by sulphur doping. Single NWs showed photoluminescence attributed to the InAsP QW with WZ crystal phase structure, and peak energy shifts related to the QW width were observed.
机译:研究了具有径向InAsP / InP量子阱(QW)的纤锌矿(WZ)InP纳米线(NWs)的MOVPE生长和光学特性。使用纯WZ-InP NW核生长具有纯WZ晶体相结构的InAsP QW,其晶体结构受硫掺杂控制。单个NW表现出归因于具有WZ晶体相结构的InAsP QW的光致发光,并且观察到与QW宽度相关的峰值能量位移。

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