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Homologous recombination repairs secondary replication induced DNA double-strand breaks after ionizing radiation

机译:同源重组修复电离辐射后二次复制诱导的DNA双链断裂

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摘要

Ionizing radiation (IR) produces direct two-ended DNA double-strand breaks (DSBs) primarily repaired by non-homologous end joining (NHEJ). It is, however, well established that homologous recombination (HR) is induced and required for repair of a subset of DSBs formed following IR. Here, we find that HR induced by IR is drastically reduced when post-DNA damage replication is inhibited in mammalian cells. Both IR-induced RAD51 foci and HR events in the hprt gene are reduced in the presence of replication polymerase inhibitor aphidicolin (APH). Interestingly, we also detect reduced IR-induced toxicity in HR deficient cells when inhibiting post-DNA damage replication. When studying DSB formation following IR exposure, we find that apart from the direct DSBs the treatment also triggers formation of secondary DSBs peaking at 7–9 h after exposure. These secondary DSBs are restricted to newly replicated DNA and abolished by inhibiting post-DNA damage replication. Further, we find that IR-induced RAD51 foci are decreased by APH only in cells replicating at the time of IR exposure, suggesting distinct differences between IR-induced HR in S- and G2-phases of the cell cycle. Altogether, our data indicate that secondary replication-associated DSBs formed following exposure to IR are major substrates for IR-induced HR repair.
机译:电离辐射(IR)产生直接的两端DNA双链断裂(DSB),主要通过非同源末端连接(NHEJ)进行修复。然而,已经公认,诱导了同源重组(HR),并且该同源重组是修复IR后形成的DSB的子集所必需的。在这里,我们发现当哺乳动物细胞中DNA损伤后复制受到抑制时,IR诱导的HR会大大降低。在存在复制聚合酶抑制剂蚜虫二肽(APH)的情况下,hprt基因中IR诱导的RAD51病灶和HR事件均减少。有趣的是,当抑制DNA损伤后复制时,我们还在HR缺陷细胞中检测到IR诱导的毒性降低。当研究IR暴露后DSB的形成时,我们发现除直接DSB之外,该处理还触发了次级DSB的形成,在暴露后7–9 h达到峰值。这些次级DSB仅限于新复制的DNA,并通过抑制DNA损伤后的复制而被废除。此外,我们发现IR诱导的RAD51病灶仅在IR暴露时复制的细胞中被APH降低,表明IR诱导的HR在细胞周期的S期和G2期之间存在明显差异。总体而言,我们的数据表明,暴露于IR后形成的与复制相关的次级DSB是IR诱导的HR修复的主要底物。

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