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5-nm LiF as an Efficient Cathode Buffer Layer in Polymer Solar Cells Through Simply Introducing a C60 Interlayer

机译:通过简单介绍C60中间层将5nm LiF用作聚合物太阳能电池中的高效阴极缓冲层

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摘要

Lithium fluoride (LiF) is an efficient and widely used cathode buffer layer (CBL) in bulk heterojunction polymer solar cells (PSCs). The LiF thickness is normally limited to 1 nm due to its insulting property. Such small thickness is difficult to precise control during thermal deposition, and more importantly, 1-nm-thick LiF cannot provide sufficient protection for the underlying active layer. Herein, we demonstrated the application of a very thick LiF as CBL without sacrificing the device efficiency by simply inserting a C60 layer between the active layer and LiF layer. The devices with the C60/LiF (5 nm) double CBLs exhibit a peak power conversion efficiency (PCE) of 3.65%, which is twofold higher than that (1.79%) of LiF (5 nm)-only device. The superior performance of the C60/LiF (5 nm)-based devices is mainly attributed to the good electrical conductivity of the C60/LiF (5 nm) bilayer, arising from the intermixing occurred at the C60/LiF interface. Besides, the formation of a P3HT/C60 subcell and the optical spacer effect of C60 also contribute to the increase in short-circuit current density (J sc) of the device. With further increase of LiF thickness to 8 nm, a PCE of 1.10% is attained for the C60/LiF-based device, while the negligible photovoltaic performance is observed for the LiF-only device. All in all, our results show that C60/LiF bilayer is a promising alternative to LiF single layer due to its high tolerance to the LiF thickness variations.Electronic supplementary materialThe online version of this article (10.1186/s11671-017-2299-y) contains supplementary material, which is available to authorized users.
机译:氟化锂(LiF)是整体异质结聚合物太阳能电池(PSC)中有效且广泛使用的阴极缓冲层(CBL)。由于其绝缘性,LiF厚度通常限制为1 nm。如此小的厚度难以在热沉积期间进行精确控制,更重要的是,厚度为1 nm的LiF无法为下面的有源层提供足够的保护。本文中,我们展示了通过在有源层和LiF层之间简单插入C60层而在不牺牲器件效率的情况下将非常厚的LiF用作CBL的应用。具有C60 / LiF(5 nm)双CBL的器件的峰值功率转换效率(PCE)为3.65%,比仅LiF(5 nm)的器件的峰值功率转换效率(1.79%)高出两倍。基于C60 / LiF(5 nm)的设备的卓越性能主要归因于C60 / LiF(5 nm)双层的良好电导率,这是由于C60 / LiF界面处发生的混合引起的。此外,P3HT / C60子电池的形成和C60的光学间隔效应也有助于增加器件的短路电流密度(J sc)。随着LiF厚度进一步增加到8 nm,基于C60 / LiF的设备的PCE达到1.10%,而仅LiF的设备的光伏性能却可以忽略不计。总而言之,我们的结果表明C60 / LiF双层由于其对LiF厚度变化的高度耐受性而成为LiF单层的有希望的替代品。电子补充材料本文的在线版本(10.1186 / s11671-017-2299-y)包含补充材料,授权用户可以使用。

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