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Chemical Uniformity in Ferroelectric KxNa1−xNbO3 Thin Films

机译:铁电KxNa1-的化学均匀性xNbO3薄膜

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摘要

Potassium sodium niobate (KNN) has long been considered a viable candidate for replacing lead‐based materials in piezo‐ and ferroelectric devices. The introduction of KNN on an industrial scale is highly awaited; however, processing challenges still remain to be solved. The main obstacle is lack of reproducible growth of uniform boules or thin films at temperatures that facilitate monolithic device integration. Herein, atomic layer deposition (ALD) of KNN thin films, exhibiting high chemical uniformity over large areas, is reported. The cation composition can be controlled at a 1% level, enabling fine‐tuning of the film stoichiometry across the morphotropic phase boundaries of the KNbO3–NaNbO3 solid solution. The films are obtained as highly oriented on Pt (111)||Si (100)‐substrates after annealing at temperatures as low as 550 °C. They exhibit converse piezoelectric effects with magnitudes in accordance with literature. It is believed that the successful development of the described ALD process represents a major step toward achieving lead‐free piezo‐ and ferroelectrics on an industrial scale.
机译:长期以来,铌酸钾(KNN)被认为是替代压电和铁电设备中铅基材料的可行选择。迫切需要在工业规模上引入KNN。但是,加工挑战仍然有待解决。主要障碍是在促进单片器件集成的温度下,缺乏均匀的球状或薄膜的可再现生长。在此,报道了在大面积上显示出高化学均匀性的KNN薄膜的原子层沉积(ALD)。可以将阳离子组成控制在1%的水平,从而可以跨KNbO3-NaNbO3固溶体的相变相边界微调薄膜的化学计量。在低至550°C的温度下退火后,可以在Pt(111)|| Si(100)-衬底上获得高度取向的薄膜。根据文献,它们表现出相反的压电效应。可以相信,所描述的ALD工艺的成功开发代表了在工业规模上实现无铅压电和铁电的重要一步。

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