Printing fully solution-processed organic electronic devices may potentially revolutionize production of flexible electronics for various applications. However, difficulties in forming thin, flat, uniform films through printing techniques have been responsible for poor device performance and low yields. Here, we report on fully solution-processed organic thin-film transistor (TFT) arrays with greatly improved performance and yields, achieved by layering solution-processable materials such as silver nanoparticle inks, organic semiconductors, and insulating polymers on thin plastic films. A treatment layer improves carrier injection between the source/drain electrodes and the semiconducting layer and dramatically reduces contact resistance. Furthermore, an organic semiconductor with large-crystal grains results in TFT devices with shorter channel lengths and higher field-effect mobilities. We obtained mobilities of over 1.2 cm2 V−1 s−1 in TFT devices with channel lengths shorter than 20 μm. By combining these fabrication techniques, we built highly uniform organic TFT arrays with average mobility levels as high as 0.80 cm2 V−1 s−1 and ideal threshold voltages of 0 V. These results represent major progress in the fabrication of fully solution-processed organic TFT device arrays.
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机译：打印经过完全溶液处理的有机电子设备可能会彻底改变用于各种应用的柔性电子产品的生产。然而，通过印刷技术形成薄的，平坦的，均匀的膜的困难已经导致不良的器件性能和低产量。在这里，我们报道了通过溶液处理的材料（例如银纳米粒子墨水，有机半导体和绝缘聚合物）层叠在塑料薄膜上而获得的具有完全改善的性能和良率的完全溶液处理的有机薄膜晶体管（TFT）阵列。处理层改善了源/漏电极与半导体层之间的载流子注入，并显着降低了接触电阻。此外，具有大晶粒的有机半导体导致TFT器件具有较短的沟道长度和较高的场效应迁移率。我们在沟道长度小于20μm的TFT器件中获得了超过1.2 cm 2 V -1 s -1 的迁移率。通过结合这些制造技术，我们构建了高度均匀的有机TFT阵列，其平均迁移率水平高达0.80 cm 2 V -1 s -1 理想阈值电压为0 V.这些结果代表了在完全溶液处理的有机TFT器件阵列的制造中的重大进展。
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