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Single Source Precursor-based Solvothermal Synthesis of Heteroatom-doped Graphene and Its Energy Storage and Conversion Applications

机译:杂原子掺杂石墨烯的单源前驱基溶剂热合成及其储能和转化应用

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摘要

Solvothermal processes are considered efficient approaches for the gram-scale production of graphene. Further modification of graphene by chemical doping is an important approach to tailor its properties. In this work, we successfully synthesized sulfur-doped graphene by using a solvothermal method with dimethyl sulfoxide as a precursor, which is a common laboratory reagent. Nitrogen-doped graphene was produced to demonstrate the generality of this process. These heteroatom-doped graphene materials exhibited high surface areas and high contents of heteroatoms. Furthermore, the lithium-ion storage properties and oxygen reduction reaction catalytic activity of these materials were also investigated. The success of this approach might facilitate the development of other advanced graphene-based materials with relative simplicity, scalability, and cost effectiveness for use in various potential applications.
机译:溶剂热法被认为是克级生产石墨烯的有效方法。通过化学掺杂进一步修饰石墨烯是定制其性能的重要方法。在这项工作中,我们成功地通过溶剂热法以二甲基亚砜为前体成功合成了掺杂硫的石墨烯,这是一种常见的实验室试剂。制备了氮掺杂石墨烯以证明该方法的普遍性。这些杂原子掺杂的石墨烯材料表现出高表面积和高杂原子含量。此外,还研究了这些材料的锂离子存储性能和氧还原反应催化活性。这种方法的成功可能会促进具有其他方面的简单性,可伸缩性和成本效益的其他高级石墨烯基材料的开发,以用于各种潜在的应用中。

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