Origins of Ripples in CVD-Grown Few-layered MoS2 Structures under Applied Strain at Atomic Scales

摘要

The potential of the applicability of two-dimensional molybdenum disulfide (MoS2) structures, in various electronics, optoelectronics, and flexible devices requires a fundamental understanding of the effects of strain on the electronic, magnetic and optical properties. Particularly important is the recent capability to grow large flakes of few-layered structures using chemical vapor deposition (CVD) wherein the top layers are relatively smaller in size than the bottom layers, resulting in the presence of edges/steps across adjacent layers. This paper investigates the strain response of such suspended few-layered structures at the atomic scales using classic molecular dynamics (MD) simulations. MD simulations suggest that the suspended CVD-grown structures are able to relax the applied in-plane strain through the nucleation of ripples under both tensile and compressive loading conditions. The presence of terraced edges in these structures is the cause for the nucleation of ripples at the edges that grow towards the center of the structure under applied in-plane strains. The peak amplitudes of ripples observed are in excellent agreement with the experimental observations. The study provides critical insights into the mechanisms of strain relaxation of suspended few-layered MoS2 structures that determine the interplay between the mechanical response and the electronic properties of CVD-grown structures.