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首页> 外文期刊>Scientific reports. >Origins of Moiré Patterns in CVD-grown MoS 2 Bilayer Structures at the Atomic Scales
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Origins of Moiré Patterns in CVD-grown MoS 2 Bilayer Structures at the Atomic Scales

机译:在原子尺度的CVD-生长的MOS 2双层结构中莫尔图列的起源

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The chemical vapor deposition (CVD)-grown two-dimensional molybdenum disulfide (MoS2) structures comprise of flakes of few layers with different dimensions. The top layers are relatively smaller in size than the bottom layers, resulting in the formation of edges/steps across adjacent layers. The strain response of such few-layer terraced structures is therefore likely to be different from exfoliated few-layered structures with similar dimensions without any terraces. In this study, the strain response of CVD-grown few-layered MoS2 terraced structures is investigated at the atomic scales using classic molecular dynamics (MD) simulations. MD simulations suggest that the strain relaxation of CVD-grown triangular terraced structures is observed in the vertical displacement of the atoms across the layers that results in the formation of Moiré patterns. The Moiré islands are observed to nucleate at the corners or edges of the few-layered structure and propagate inwards under both tensile and compressive strains. The nucleation of these islands is observed to happen at tensile strains of ~ 2% and at compressive strains of ~2.5%. The vertical displacements of the atoms and the dimensions of the Moiré islands predicted using the MD simulation are in excellent agreement with that observed experimentally.
机译:化学气相沉积(CVD) - 制备二维二硫化钼(MOS2)结构包括具有不同尺寸的几层薄片。顶层的尺寸比底层相对较小,导致相邻层的边缘/步骤的形成。因此,这种少数层梯形结构的应变响应可能与剥离的少数层结构不同,其具有类似尺寸而没有任何露台的尺寸。在这项研究中,使用经典分子动力学(MD)模拟在原子尺度上研究了CVD生长的少数层MOS2梯形结构的应变响应。 MD模拟表明,在导致Moiré图案的形成的原子的垂直位移中观察到CVD生长三角形梯形结构的应变松弛。观察Moiré岛在少数层结构的角落或边缘处核心,并在拉伸和压缩菌株下向内传播。观察到这些岛的成核,以〜2%的拉伸菌株和〜2.5%的压缩菌株发生。使用MD模拟预测的原子的垂直位移和莫尔群岛的尺寸与实验观察到的良好协议。

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