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Magnetic hard gap due to bound magnetic polarons in the localized regime

机译:在局部区域中由于束缚的磁极化子导致的硬磁隙

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摘要

We investigate the low temperature electron transport properties of manganese doped lead sulfide films. The system shows variable range hopping at low temperatures that crosses over into an activation regime at even lower temperatures. This crossover is destroyed by an applied magnetic field which suggests a magnetic origin of the hard gap, associated with bound magnetic polarons. Even though the gap forms around the superconducting transition temperature of lead, we do not find evidence of this being due to insulator-superconductor transition. Comparison with undoped PbS films, which do not show the activated transport behavior, suggests that bound magnetic polarons create the hard gap in the system that can be closed by magnetic fields.
机译:我们研究了锰掺杂的硫化铅薄膜的低温电子传输性能。该系统显示出在低温下的可变范围跳变,甚至在更低的温度下也会转变成激活状态。该交叉被施加的磁场破坏,该磁场暗示与结合的磁极化子相关的硬间隙的磁性起源。即使在铅的超导转变温度周围形成了间隙,我们也没有发现这是由于绝缘体-超导体转变引起的。与未掺杂的PbS薄膜的比较(未显示出激活的传输行为)表明,结合的磁极化子在系统中形成了硬间隙,该间隙可以被磁场封闭。

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