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Vacuum level dependent photoluminescence in chemical vapor deposition-grown monolayer MoS2

机译:在化学气相沉积生长的单层MoS2中与真空水平有关的光致发光

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摘要

The stronger photoluminescence (PL) in chemical vapor deposition (CVD) grown monolayer MoS2 has been attributed to its high crystal quality compared with that in mechanically exfoliated (ME) crystal, which is contrary to the cognition that the ME crystal usually have better crystal quality than that of CVD grown one and it is expected with a better optical quality. In this report, the reason of abnormally strong PL spectra in CVD grown monolayer crystal is systematically investigated by studying the in-situ opto-electrical exploration at various environments for both of CVD and ME samples. High resolution transmission electron microscopy is used to investigate their crystal qualities. The stronger PL in CVD grown crystal is due to the high p-doping effect of adsorbates induced rebalance of exciton/trion emission. The first principle calculations are carried out to explore the interaction between adsorbates in ambient and defects sites in MoS2, which is consistent to the experimental phenomenon and further confirm our proposed mechanisms.
机译:化学汽相沉积(CVD)生长的单层MoS2中较强的光致发光(PL)归因于其晶体质量高于机械剥离(ME)晶体中的晶体质量,这与人们认为ME晶体通常具有更好的晶体质量相反较之CVD成长的CVD而言,其光学质量有望更高。在本报告中,通过研究CVD和ME样品在各种环境下的原位光电勘探,系统地研究了CVD生长的单层晶体中PL光谱异常强的原因。高分辨率透射电子显微镜用于研究其晶体质量。 CVD生长的晶体中更强的PL是由于被吸附物引起的激子/ tri子发射再平衡而产生的高p掺杂效应。进行第一性原理计算是为了探索环境中的吸附物与MoS2中缺陷部位之间的相互作用,这与实验现象是一致的,并进一步证实了我们提出的机理。

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