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Dark-exciton valley dynamics in transition metal dichalcogenide alloy monolayers

机译:过渡金属二硫化氢合金单层中的暗激子谷动力学

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摘要

We report a comprehensive theory to describe exciton and biexciton valley dynamics in monolayer Mo1−xWxSe2 alloys. To probe the impact of different excitonic channels, including bright and dark excitons, intravalley biexcitons, intervalley scattering between bright excitons, as well as bright biexcitons, we have performed a systematic study from the simplest system to the most complex one. In contrast to the binary WSe2 monolayer with weak photoluminescence (PL) and high valley polarization at low temperatures and the MoSe2, that presents high PL intensity, but low valley polarization, our results demonstrate that it is possible to set up a ternary alloy with intermediate W-concentration that holds simultaneously a considerably robust light emission and an efficient optical orientation of the valley pseudospin. We find the critical value of W-concentration, xc, that turns alloys from bright to darkish. The dependence of the PL intensity on temperature shows three regimes: while bright monolayer alloys display a usual temperature dependence in which the intensity decreases with rising temperature, the darkish alloys exhibit the opposite behavior, and the alloys with x around xc show a non-monotonic temperature response. Remarkably, we observe that the biexciton enhances significantly the stability of the exciton emission against fluctuations of W-concentration for bright alloys. Our findings pave the way for developing high-performance valleytronic and photo-emitting devices.
机译:我们报告了一个综合的理论来描述单层Mo1-xWxSe2合金中的激子和双激子谷动力学。为了探究不同的激子通道的影响,包括明暗激子,谷内双激子,亮激子之间的区间间隔散射以及亮双激子,我们从最简单的系统到最复杂的系统进行了系统的研究。与在低温下具有弱光致发光(PL)和高谷极化的二元WSe2单层和MoSe2呈现出高PL强度但低谷极化的相反,我们的结果表明,可以建立具有中间光子的三元合金W浓度可同时保持相当强的光发射和谷伪自旋的有效光学方向。我们发现了W浓度xc的临界值,该临界值使合金从亮变暗。 PL强度对温度的依赖性表现出三种状态:明亮的单层合金表现出通常的温度依赖性,其中强度随温度升高而降低,深色合金表现出相反的行为,x约为xc的合金表现出非单调性温度响应。值得注意的是,我们观察到,对于光亮合金,双激子显着增强了激子发射的稳定性,以抵抗W浓度的波动。我们的发现为开发高性能山谷电子和光发射设备铺平了道路。

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