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>Engineering nanocolumnar defect configurations for optimized vortex pinning in high temperature superconducting nanocomposite wires
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Engineering nanocolumnar defect configurations for optimized vortex pinning in high temperature superconducting nanocomposite wires
We report microstructural design via control of BaZrO3 (BZO) defect density in high temperature superconducting (HTS) wires based on epitaxial YBa2Cu3O7-δ (YBCO) films to achieve the highest critical current density, Jc, at different fields, H. We find the occurrence of Jc(H) cross-over between the films with 1–4 vol% BZO, indicating that optimal BZO doping is strongly field-dependent. The matching fields, Bφ, estimated by the number density of BZO nanocolumns are matched to the field ranges for which 1–4 vol% BZO-doped films exhibit the highest Jc(H). With incorporation of BZO defects with the controlled density, we fabricate 4-μm-thick single layer, YBCO + BZO nanocomposite film having the critical current (Ic) of ~1000 A cm−1 at 77 K, self-field and the record minimum Ic, Ic(min), of 455 A cm−1 at 65 K and 3 T for all field angles. This Ic(min) is the largest value ever reported from HTS films fabricated on metallic templates.
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机译:我们报告了通过基于外延YBa2Cu3O7-δ(YBCO)薄膜的高温超导(HTS)导线中BaZrO3(BZO)缺陷密度的控制进行的微结构设计,以在不同的磁场H下实现最高的临界电流密度Jc。在具有1-4%vol%BZO的薄膜之间发生Jc(H)交叉,表明最佳BZO掺杂与场强相关。由BZO纳米柱的数量密度估算出的匹配场Bφ与1-4%vol%的BZO掺杂薄膜表现出最高Jc(H)的场范围相匹配。通过掺入具有受控密度的BZO缺陷,我们制造了厚度为4μm的单层YBCO + BZO纳米复合膜,其在77 K时的临界电流(Ic)为〜1000 A cm -1 sup>,自视场,并且在所有视场角下,在65 K和3 T下记录的最小Ic,Ic(min)均为455 A cm -1 sup>。 Ic(min)是有史以来在金属模板上制造的HTS膜所报告的最大值。
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