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Engineering nanocolumnar defect configurations for optimized vortex pinning in high temperature superconducting nanocomposite wires

机译:工程纳米柱缺陷配置可优化高温超导纳米复合线材的涡旋钉扎

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摘要

We report microstructural design via control of BaZrO3 (BZO) defect density in high temperature superconducting (HTS) wires based on epitaxial YBa2Cu3O7-δ (YBCO) films to achieve the highest critical current density, Jc, at different fields, H. We find the occurrence of Jc(H) cross-over between the films with 1–4 vol% BZO, indicating that optimal BZO doping is strongly field-dependent. The matching fields, Bφ, estimated by the number density of BZO nanocolumns are matched to the field ranges for which 1–4 vol% BZO-doped films exhibit the highest Jc(H). With incorporation of BZO defects with the controlled density, we fabricate 4-μm-thick single layer, YBCO + BZO nanocomposite film having the critical current (Ic) of ~1000 A cm−1 at 77 K, self-field and the record minimum Ic, Ic(min), of 455 A cm−1 at 65 K and 3 T for all field angles. This Ic(min) is the largest value ever reported from HTS films fabricated on metallic templates.
机译:我们报告了通过基于外延YBa2Cu3O7-δ(YBCO)薄膜的高温超导(HTS)导线中BaZrO3(BZO)缺陷密度的控制进行的微结构设计,以在不同的磁场H下实现最高的临界电流密度Jc。在具有1-4%vol%BZO的薄膜之间发生Jc(H)交叉,表明最佳BZO掺杂与场强相关。由BZO纳米柱的数量密度估算出的匹配场Bφ与1-4%vol%的BZO掺杂薄膜表现出最高Jc(H)的场范围相匹配。通过掺入具有受控密度的BZO缺陷,我们制造了厚度为4μm的单层YBCO + BZO纳米复合膜,其在77 K时的临界电流(Ic)为〜1000 A cm -1 ,自视场,并且在所有视场角下,在65 K和3 T下记录的最小Ic,Ic(min)均为455 A cm -1 。 Ic(min)是有史以来在金属模板上制造的HTS膜所报告的最大值。

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