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Preparation and investigation of nano-thick FTO/Ag/FTO multilayer transparent electrodes with high figure of merit

机译:高品质因数的纳米FTO / Ag / FTO多层透明电极的制备与研究

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摘要

In order to improve the conductivity of the single–layered nano-thick F doped SnO2 (FTO) thin films, an Ag mid–layer is embedded between the FTO layers. In our work, the effects of mid–layer Ag and top FTO layer on the structural, electrical and optical properties of FTO/Ag/FTO multilayered composite structures deposited on quartz glass substrates by magnetron sputtering at 100 °C have been investigated. As the thickness of Ag mid–layer increases, the resistivity decreases. As the top FTO layer thickness increases, the resistivity increases. The highest value of figure of merit φTC is 7.8 × 10−2 Ω−1 for the FTO (20 nm)/Ag (7 nm)/FTO (30 nm) multilayers, while the average optical transmittance is 95.5% in the visible range of wavelengths and the resistivity is 8.8 × 10−5 Ω·cm. In addition, we also describe the influence of Ag and top FTO layer thickness on structural, electrical and optical properties of the nano-thick FTO (20 nm)/Ag/FTO multilayers and the mechanism of the changes of electrical and optical properties at different Ag and top FTO layer thicknesses.
机译:为了提高单层纳米F掺杂SnO2(FTO)薄膜的电导率,在FTO层之间嵌入了Ag中间层。在我们的工作中,研究了中层Ag和顶层FTO对通过磁控溅射在100 C下沉积在石英玻璃基板上的FTO / Ag / FTO多层复合结构的结构,电学和光学性能的影响。随着Ag中层厚度的增加,电阻率降低。随着顶层FTO层厚度的增加,电阻率也会增加。 FTO(20 nm)/ Ag(7 nm)/ FTO(30 nm)的品质因数φTC的最大值为7.8×10 −2 Ω −1 多层,而在可见光波长范围内的平均透光率是95.5%,电阻率是8.8×<10 -5 Ω·cm。此外,我们还描述了Ag和顶层FTO层厚度对纳米级FTO(20 nm)/ Ag / FTO多层膜的结构,电学和光学性质的影响以及电学和光学性质在不同条件下变化的机制Ag和顶层FTO层厚度。

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