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Linear magnetoresistivity in layered semimetallic CaAl2Si2

机译:层状半金属CaAl2Si2中的线性磁阻

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摘要

According to an earlier Abrikosov model, a positive, nonsaturating, linear magnetoresistivity (LMR) is expected in clean, low-carrier-density metals when measured at very low temperatures and under very high magnetic fields. Recently, a vast class of materials were shown to exhibit extraordinary high LMR but at conditions that deviate sharply from the above-mentioned Abrikosov-type conditions. Such deviations are often considered within either classical Parish-Littlewood scenario of random-conductivity network or within a quantum scenario of small-effective mass or low carriers at tiny pockets neighboring the Fermi surface. This work reports on a manifestation of novel example of a robust, but moderate, LMR up to ∼100 K in the diamagnetic, layered, compensated, semimetallic CaAl2Si2. We carried out extensive and systematic characterization of baric and thermal evolution of LMR together with first-principles electronic structure calculations based on density functional theory. Our analyses revealed strong correlations among the main parameters of LMR and, in addition, a presence of various transition/crossover events based on which a P − T phase diagram was constructed. We discuss whether CaAl2Si2 can be classified as a quantum Abrikosov or classical Parish-Littlewood LMR system.
机译:根据较早的Abrikosov模型,当在非常低的温度和非常高的磁场下进行测量时,在干净的,低载流子密度的金属中,有望得到正的,非饱和的线性磁阻(LMR)。近来,已显示出一大类材料表现出非凡的高LMR,但在与上述Abrikosov型条件明显不同的条件下。通常在随机电导网络的经典Parish-Littlewood场景中,或者在费米表面附近的小凹穴中,在有效质量较小或低载流子的量子场景中,通常会考虑这种偏差。这项工作报告了在抗磁的,分层的,补偿的半金属CaAl2Si2中,一个坚固但适中的LMR的新示例的表现,该LMR高达〜100K。我们基于密度泛函理论对LMR的正电子和热演化进行了广泛而系统的表征,并进行了第一性原理电子结构计算。我们的分析表明,LMR的主要参数之间存在很强的相关性,此外,还存在各种过渡/交叉事件,以此为基础构建了P-T相图。我们讨论CaAl2Si2是否可以归类为量子Abrikosov或经典的Parish-Littlewood LMR系统。

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