首页> 外文会议>2017 IEEE 7th International Conference Nanomaterials: Application amp; Properties >Influence of the effective layer thickness with Dy and Temperature of heat treatment on the structural-phase state and magnetoresistive properties of Ni/Dy/Co three-layer films
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Influence of the effective layer thickness with Dy and Temperature of heat treatment on the structural-phase state and magnetoresistive properties of Ni/Dy/Co three-layer films

机译:有效层厚度,Dy和热处理温度对Ni / Dy / Co三层膜结构相态和磁阻性能的影响

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The influence of the effective Dy layer thickness and temperature of the heat treatment on the structural-phase state, electrophysical and magnetoresistive properties of three-layer Ni/Dy/Co films have been analyzed. The research result of the phase composition investigation in the as-deposited state corresponds to fcc-Ni + hcp-Co + fcc-Co + qa-Dy. It was determined that the system is characterized by a relatively large value of the temperature coefficient of resistance (~10-3K-1) and has resistivity of the order of ρ~ 10-6 Om m, that is due to the presence of a large number of defects in the crystalline system structure. The investigation in the as-deposited state indicates an anisotropic behavior of the magnetoresistance dependence, the magnitude of which varies with the change in the effective thickness of the Dy layer. The heat treatment within the limits of 500-800 K does not lead to a change in the phase composition and the nature of the dependence of magnetoresistance (B), but only causes recrystallization processes and changes in the value of the magnetoresistance amplitude. The sharp change in the magnetoresistance and the coercive force with the change of the orientation of the sample in the external magnetic field allows to consider these films as a sensitive element of the AMR-sensor.
机译:分析了有效Dy层厚度和热处理温度对三层Ni / Dy / Co膜结构相态,电物理和磁阻性能的影响。沉积状态下的相组成研究的研究结果对应于fcc-Ni + hcp-Co + fcc-Co + qa-Dy。已确定该系统的特征在于电阻温度系数的值相对较大(〜10 -3 K -1 ),电阻率约为ρ 〜10 -6 Om m,这是由于晶体系统结构中存在大量缺陷所致。在沉积状态下的研究表明磁阻依赖性的各向异性行为,其强度随Dy层的有效厚度的变化而变化。在500-800 K范围内的热处理不会导致相组成的变化和磁阻(B)依赖性的性质,而只会引起重结晶过程和磁阻振幅值的变化。磁阻和矫顽力随样品在外部磁场中的方向变化而急剧变化,可以将这些膜视为AMR传感器的敏感元件。

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