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Transient Radiation Imaging Based on a ZnO:Ga Single-Crystal Image Converter

机译:基于ZnO:Ga单晶图像转换器的瞬态辐射成像

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摘要

A ZnO:Ga single crystal with an applicable size of φ40 × 1 mm was prepared using the hydro-thermal method. The crystal exhibits good crystallinity and scintillation properties with a 63.94-arcsec full-width at half-maximum (FWHM) in the X-ray rocking curve (XRC) spectrum, 8% luminous non-uniformity, emission at 389 nm in the X-ray excited luminescence spectrum, fast response and 5.5% BGO luminous intensity. Furthermore, an X-ray pinhole imaging system of nanosecond temporal resolution with a ZnO:Ga single-crystal image converter was established to diagnose the cathode electron emission spatial distribution of an intense current diode. Results for shutter times of 4 μs and 5 ns were obtained, which directly represent the cathode electron spatial distribution throughout the entire pulse duration and during a certain moment of the pulse, respectively. The results demonstrate that the large ZnO:Ga single crystal can diagnose the spatial distribution of cathode electron emission in an intense current diode with high temporal resolution and provide new solutions for high-temporal-resolution diagnosis of a pulse radiation field.
机译:使用水热法制备适用尺寸为φ40×1 mm的ZnO:Ga单晶。该晶体具有良好的结晶度和闪烁特性,在X射线摇摆曲线(XRC)光谱中,半峰全宽(FWHM)为63.94弧度,发光不均匀度为8%,X-射线在389 nm处发射射线激发发光光谱,快速响应和5.5%BGO发光强度。此外,建立了具有ZnO:Ga单晶图像转换器的纳秒级时间分辨率的X射线针孔成像系统,以诊断强电流二极管的阴极电子发射空间分布。获得了4μs和5μns的快门时间的结果,它们分别直接表示整个脉冲持续时间内和在脉冲的某一时刻的阴极电子空间分布。结果表明,大的ZnO:Ga单晶可以诊断具有高时间分辨率的强电流二极管中阴极电子发射的空间分布,并为脉冲辐射场的高时间分辨率诊断提供新的解决方案。

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