Sub-10 nm patterns prepared by directed self-assembly (DSA) of block copolymer (BCP) thin films offer a breakthrough method to overcome the limitations of photolithography. Perpendicular orientation of the BCP nanostructures is essential for lithographic applications, but dissimilar surface/interfacial energies of two blocks generally favour parallel orientations, so that the perpendicular orientation could only be obtained under very limited conditions. Here, we introduce a generalized method for creating perpendicular orientations by filtered plasma treatment of the BCP films. By cross-linking the surface of disordered BCP films using only physical collisions of neutral species without ion bombardment or UV irradiation, neutral layers consistent with the BCP volume fraction are produced that promote the perpendicular orientations. This method works with BCPs of various types, volume fractions, and molecular weights individually at the top and bottom interfaces, so it was applied to orientation-controlled 3D multilayer structures and DSA processes for sub-10 nm line-spacing patterns.
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