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Ti2NiCoSnSb - a new half-Heusler type high-entropy alloy showing simultaneous increase in Seebeck coefficient and electrical conductivity for thermoelectric applications

机译:Ti2NiCoSnSb-一种新型的半霍斯勒型高熵合金在热电应用中显示塞贝克系数和电导率同时增加

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摘要

A new single phase high entropy alloy, Ti2NiCoSnSb with half-Heusler (HH) structure is synthesized for the first time by vacuum arc melting (VAM) followed by ball-milling (BM). The BM step is necessary to obtain the single phase. Local electrode atom probe (LEAP) analysis showed that the elements are homogeneously and randomly distributed in the HH phase without any clustering tendency. When the BM was carried out for 1 hour on the VAM alloy, microcrystalline alloy is obtained with traces of Sn as secondary phase. When BM was carried out for 5 h, single HH phase formation is realized in nanocrystalline form. However, when the BM samples were subjected to Spark plasma sintering (SPS), secondary phases were formed by the decomposition of primary phase. Nanostructuring leads to simultaneous increase in S and σ with increasing temperature. The micro (1 h BM-SPS) and nanocrystalline (5 h BM-SPS) alloys exhibited a power factor (S2σ) of 0.57 and 1.02 mWm−1K−2, respectively, at 860 K. The microcrystalline sample had a total thermal conductivity similar to bulk TiNiSn sample. The nanocrystalline alloy exhibited a ZT of 0.047 at 860 K. The microcrystalline alloy showed a ZT to 0.144 at 860 K, in comparison to the nanocrystalline alloy.
机译:通过真空电弧熔化(VAM)和球磨(BM)首次合成了一种新的具有半霍斯勒(HH)结构的单相高熵合金Ti2NiCoSnSb。 BM步骤对于获得单相是必需的。局部电极原子探针(LEAP)分析表明,元素在HH相中均匀且随机分布,没有任何聚集趋势。在VAM合金上进行BM 1小时后,获得了以痕量Sn作为第二相的微晶合金。当BM进行5?h时,可以形成纳米晶形式的单个HH相。然而,当将BM样品进行火花等离子体烧结(SPS)时,通过初级相的分解形成次级相。纳米结构导致S和σ随着温度的升高而同时增加。微米(1 h BM-SPS)和纳米晶体(5 h BM-SPS)合金的功率因数(S 2 σ)为0.57和1.02 mWm -1 K −2 分别在860 K时,微晶样品的总热导率与块状TiNiSn样品相似。与纳米晶合金相比,纳米晶合金在860 K时的ZT为0.047,微晶合金在860 K时的ZT为0.144。

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