A color x-ray camera for 2–6 keV using a mass produced back illuminated complementary metal oxide semiconductor sensor

摘要

There are several reports in the scientific literature of the use of mass-produced charge coupled device or complementary metal oxide semiconductor (CMOS) sensors as x-ray detectors that combine high spatial resolution with significant energy resolution. Exploiting a relatively new especially favorable ambient-temperature back-illuminated CMOS sensor, we report the development of a spectroscopic x-ray camera having particularly impressive performance for 2–6 keV photons. This instrument has several beneficial characteristics for advanced x-ray spectroscopy studies in the laboratory, at synchrotron light sources, at x-ray free electron lasers, or when using pulsed x-ray sources such as for laser plasma physics research. These characteristics include fine position and energy resolution for individual photon events, high saturation rates, frame rates above 100 Hz, easy user maintenance for damaged sensors, and software for real-time processing. We evaluate this camera as an alternative to traditional energy-dispersive solid-state detectors, such as silicon drift detectors, and also illustrate its use in a very high resolution wavelength-dispersive x-ray fluorescence spectrometer (i.e., x-ray emission spectrometer) that has recently been reported elsewhere [W. M. Holden et al., Rev. Sci. Instrum. >88(7), 073904 (2017)].