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Study of silica-based intrinsically emitting nanoparticles produced by an excimer laser

机译:准分子激光器产生的二氧化硅基本征发射纳米颗粒的研究

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摘要

We report an experimental study demonstrating the feasibility to produce both pure and Ge-doped silica nanoparticles (size ranging from tens up to hundreds of nanometers) using nanosecond pulsed KrF laser ablation of bulk glass. In particular, pure silica nanoparticles were produced using a laser pulse energy of 400 mJ on pure silica, whereas Ge-doped nanoparticles were obtained using 33 and 165 mJ per pulse on germanosilicate glass. The difference in the required energy is attributed to the Ge doping, which modifies the optical properties of the silica by facilitating energy absorption processes such as multiphoton absorption or by introducing absorbing point defects. Defect generation in bulk pure silica before nanoparticle production starts is also suggested by our results. Regarding the Ge-doped samples, scanning electron microscopy (SEM) and cathodoluminescence (CL) investigations revealed a good correspondence between the morphology of the generated particles and their emission signal due to the germanium lone pair center (GLPC), regardless of the energy per pulse used for their production. This suggests a reasonable homogeneity of the emission features of the samples. Similarly, energy dispersive X-ray spectroscopy (EDX) data showed that the O, Ge and Si signals qualitatively correspond to the particle morphology, suggesting a generally uniform chemical composition of the Ge-doped samples. No significant CL signal could be detected in pure silica nanoparticles, evidencing the positive impact of Ge for the development of intrinsically emitting nanoparticles. Transmission electron microscope (TEM) data suggested that the Ge-doped silica nanoparticles are amorphous. SEM and TEM data evidenced that the produced nanoparticles tend to be slightly more spherical in shape for a higher energy per pulse. Scanning transmission electron microscope (STEM) data have shown that, regardless of size and applied energy per pulse, in each nanoparticle, some inhomogeneity is present in the form of brighter (i.e., more dense) features of a few nanometers.
机译:我们报告了一项实验研究,证明了使用大块玻璃的纳秒脉冲KrF激光烧蚀生产纯的和Ge掺杂的二氧化硅纳米颗粒(尺寸范围从几十到数百纳米)的可行性。具体而言,在纯二氧化硅上使用400 mJ的激光脉冲能量可生产出纯二氧化硅纳米颗粒,而在锗硅酸盐玻璃上每脉冲可使用33和165 mJ可获得Ge掺杂的纳米颗粒。所需能量的差异归因于Ge掺杂,Ge掺杂通过促进能量吸收过程(如多光子吸收)或引入吸收点缺陷来改变二氧化硅的光学性能。我们的结果还表明,在开始生产纳米颗粒之前,在散装纯二氧化硅中会产生缺陷。对于掺Ge的样品,扫描电子显微镜(SEM)和阴极发光(CL)研究表明,由于锗孤对中心(GLPC),所产生的粒子的形态与它们的发射信号之间具有良好的对应关系,而与每脉冲用于生产。这表明样品的发射特征具有合理的均匀性。类似地,能量色散X射线光谱(EDX)数据显示O,Ge和Si信号定性地对应于颗粒形态,表明掺Ge样品的化学成分通常均匀。在纯二氧化硅纳米粒子中未检测到明显的CL信号,证明了Ge对于内在发射纳米粒子的发展所产生的积极影响。透射电子显微镜(TEM)数据表明,掺Ge的二氧化硅纳米粒子是无定形的。 SEM和TEM数据表明,所产生的纳米粒子的形状倾向于略为球形,以获得更高的每脉冲能量。扫描透射电子显微镜(STEM)数据表明,无论大小和每个脉冲施加的能量如何,在每个纳米颗粒中,都以几纳米的较亮(即,更致密)特征的形式存在一些不均匀性。

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