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Mechanisms of closed-state inactivation in voltage-gated ion channels

机译:电压门控离子通道的闭环失活机理

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摘要

Inactivation of voltage-gated ion channels is an intrinsic auto-regulatory process necessary to govern the occurrence and shape of action potentials and establish firing patterns in excitable tissues. Inactivation may occur from the open state (open-state inactivation, OSI) at strongly depolarized membrane potentials, or from pre-open closed states (closed-state inactivation, CSI) at hyperpolarized and modestly depolarized membrane potentials. Voltage-gated Na+, K+, Ca2+ and non-selective cationic channels utilize both OSI and CSI. Whereas there are detailed mechanistic descriptions of OSI, much less is known about the molecular basis of CSI. Here, we review evidence for CSI in voltage-gated cationic channels (VGCCs) and recent findings that shed light on the molecular mechanisms of CSI in voltage-gated K+ (Kv) channels. Particularly, complementary observations suggest that the S4 voltage sensor, the S4S5 linker and the main S6 activation gate are instrumental in the installment of CSI in Kv4 channels. According to this hypothesis, the voltage sensor may adopt a distinct conformation to drive CSI and, depending on the stability of the interactions between the voltage sensor and the pore domain, a closed-inactivated state results from rearrangements in the selectivity filter or failure of the activation gate to open. Kv4 channel CSI may efficiently exploit the dynamics of the subthreshold membrane potential to regulate spiking properties in excitable tissues.
机译:电压门控离子通道的失活是内在的自动调节过程,必须控制动作电位的出现和形状,并在可激发的组织中建立发射模式。在强去极化膜电势下,可以从开放状态(开放状态失活,OSI)发生失活,也可以在超极化和中度去极化膜电势下,从开放前的闭合状态(封闭状态失活,CSI)发生失活。电压门控的Na + ,K + ,Ca 2 + 和非选择性阳离子通道均利用OSI和CSI。尽管对OSI进行了详细的机械描述,但对CSI的分子基础知之甚少。在这里,我们回顾了电压门控阳离子通道(VGCC)中CSI的证据,以及最近的发现揭示了电压门控K + (Kv)通道中CSI的分子机制。特别是,补充性观察表明,S4电压传感器,S4S5链接器和主S6激活门对在Kv4通道中安装CSI发挥了作用。根据该假设,电压传感器可以采用不同的构型来驱动CSI,并且根据电压传感器与孔域之间相互作用的稳定性,选择性过滤器中的重排或电极的故障会导致闭合灭活状态。激活门打开。 Kv4通道CSI可以有效利用亚阈值膜电位的动力学来调节可兴奋组织中的尖峰特性。

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