首页> 美国卫生研究院文献>The Journal of Physiology >External K+ relieves the block but not the gating shift caused by Zn2+ in human Kv1.5 potassium channels
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External K+ relieves the block but not the gating shift caused by Zn2+ in human Kv1.5 potassium channels

机译:外部K +缓解了人Kv1.5钾通道中Zn2 +引起的阻断作用但不能缓解门控移位

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class="enumerated" style="list-style-type:decimal">We used the whole-cell recording technique to examine the effect of extracellular Zn2+ on macroscopic currents due to Kv1.5 channels expressed in the human embryonic kidney cell line HEK293.Fits of a Boltzmann function to tail current amplitudes showed that 1 mm Zn2+ shifted the half-activation voltage from -10.2 ± 0.4 to 21.1 ± 0.7 mV and the slope factor increased from 6.8 ± 0.4 to 9.4 ± 0.7 mV. The maximum conductance in 1 mm Zn2+ and with 3.5 mm K+o was 33 ± 7 % of the control value.In physiological saline the apparent KD for the Zn2+ block was 650 ± 24 μm and was voltage independent. A Hill coefficient of 1.0 ± 0.03 implied that block is mediated by the occupation of a single binding site.Increasing the external concentration of K+ ([K+]o) inhibited the block by Zn2+. Estimates of the apparent KD of the Zn2+ block in 0, 5 and 135 mm K+ were 69, 650 and 2100 μm, respectively. External Cs+ relieved the Zn2+ block but was less effective than K+. Changing [K+]o did not affect the Zn2+-induced gating shift.A model of allosteric inhibition fitted to the relationship between the block by Zn2+ and the block relief by external K+ gave KD estimates of ≈70 μm for Zn2+ and ≈500 μm for K+.We propose that the gating shift and the block caused by Zn2+ are mediated by two distinct sites and that the blocking site is located in the external mouth of the pore.
机译:class =“ enumerated” style =“ list-style-type:decimal”> <!-list-behavior =枚举前缀-word = mark-type = decimal max-label-size = 0-> 我们使用全细胞记录技术来研究细胞外Zn 2 + 对人胚胎肾细胞系HEK293中表达的Kv1.5通道引起的宏观电流的影响。 玻尔兹曼函数对尾电流幅度的拟合表明,1 mm Zn 2 + 将半激活电压从-10.2±0.4移至21.1±0.7 mV,斜率从6.8±0.4增大至9.4 ±0.7毫伏在1 mm Zn 2 + 和3.5 mm K + o时的最大电导为对照值的33±7%。 在生理盐水中Zn 2 + 嵌段的表观KD为650±24μm,且与电压无关。 Hill系数为1.0±0.03表示该阻断是由单个结合位点的占据介导的。 增加K + 的外部浓度([K + < / sup>] o)抑制了Zn 2 + 的阻滞作用。 Zn 2 + 块在0、5和135 mm K + 中的表观KD估计分别为69、650和2100μm。外部Cs + 解除了Zn 2 + 阻滞,但效果不如K + 。改变[K + ] o并不会影响Zn 2 + 引起的门控位移。 一种变构抑制模型适合于两者之间的关系。 Zn 2 + 阻滞,外部K + 阻滞释放,对于Zn 2 + 的KD估计值为≈70μm,对于Zn 2 + 的KD估计为≈500μm K + 我们认为门控位移和Zn 2 + 引起的阻滞是由两个不同的位点介导的,并且阻滞位点是位于毛孔的外部。

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