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Dependence of the fluorination intercalation of graphene toward high-quality fluorinated graphene formation

机译:石墨烯氟化插层对高质量氟化石墨烯形成的依赖性

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摘要

A direct gas–solid reaction between fluorine gas (F2) and graphene is expected to become an inexpensive, continuous and scalable production method to prepare fluorinated graphene. However, the dependence of the fluorination intercalation of graphene is still poorly understood, which prevents the formation of high-quality fluorinated graphene. Herein, we demonstrate that chemical defects (oxygen group defects) on graphene sheets play a leading role in promoting fluorination intercalation, whereas physical defects (point defects), widely considered to be an advantage due to more diffusion channels for F2, were not influential. Tracing the origins, compared with the point defects, the unstable hydroxyl and epoxy groups produced active radicals and the relatively stable carbonyl and carboxyl groups activated the surrounding aromatic regions, thereby both facilitating fluorination intercalation, and the former was a preferential and easier route. Based on the above investigations, we successfully prepared fluorinated graphene with an ultrahigh interlayer distance (9.7 Å), the largest value reported for fluorinated graphene, by customizing graphene with more hydroxyl and epoxy groups. It presented excellent self-lubricating ability, with an ultralow interlayer interaction of 0.056 mJ m–2, thus possessing a far lower friction coefficient compared with graphene, when acting as a lubricant. Moreover, it was also easy to exfoliate by shearing, due to the diminutive interlayer friction and eliminated commensurate stacking. The exfoliated number of layers of less than three exceeded 80% (monolayer rate ≈ 40%), and no surfactant was applied to prevent further stacking.
机译:预计氟气(F2)与石墨烯之间的直接气固反应将成为一种廉价,连续且可扩展的制备氟化石墨烯的生产方法。然而,对石墨烯的氟化嵌入的依赖性仍然知之甚少,这阻止了高质量氟化石墨烯的形成。本文中,我们证明了石墨烯片上的化学缺陷(氧原子团缺陷)在促进氟化嵌入方面起着主导作用,而物理缺陷(点缺陷)由于对F2具有更多的扩散通道而被广泛认为是一种优势,而没有影响。追踪起因,与点缺陷相比,不稳定的羟基和环氧基会产生活性自由基,而相对稳定的羰基和羧基会活化周围的芳族区域,从而促进氟化插层,而前者是优先且更容易的途径。基于上述研究,我们通过定制具有更多羟基和环氧基的石墨烯,成功制备了具有超高层间距离(9.7Å)的氟化石墨烯,这是氟化石墨烯报道的最大值。它具有出色的自润滑能力,层间相互作用低至0.056 mJ m –2 ,因此与石墨烯相比,其摩擦系数要低得多。而且,由于层间摩擦小和消除了相应的堆积,它也易于通过剪切剥落。少于三层的剥落层数超过80%(单层率≈40%),并且未施加表面活性剂以防止进一步堆积。

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