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Evaluating the electronic structure of formal LnII ions in LnII(C5H4SiMe3)31– using XANES spectroscopy and DFT calculations

机译:评估LnII(C5H4SiMe3)3中形式LnII离子的电子结构1 –使用XANES光谱和DFT计算

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摘要

The isolation of [K(2.2.2-cryptand)][Ln(C5H4SiMe3)3], formally containing LnII, for all lanthanides (excluding Pm) was surprising given that +2 oxidation states are typically regarded as inaccessible for most 4f-elements. Herein, X-ray absorption near-edge spectroscopy (XANES), ground-state density functional theory (DFT), and transition dipole moment calculations are used to investigate the possibility that Ln(C5H4SiMe3)3 1– (Ln = Pr, Nd, Sm, Gd, Tb, Dy, Y, Ho, Er, Tm, Yb and Lu) compounds represented molecular LnII complexes. Results from the ground-state DFT calculations were supported by additional calculations that utilized complete-active-space multi-configuration approach with second-order perturbation theoretical correction (CASPT2). Through comparisons with standards, Ln(C5H4SiMe3)3 1– (Ln = Sm, Tm, Yb, Lu, Y) are determined to contain 4f6 5d0 (SmII), 4f13 5d0 (TmII), 4f14 5d0 (YbII), 4f14 5d1 (LuII), and 4d1 (YII) electronic configurations. Additionally, our results suggest that Ln(C5H4SiMe3)3 1– (Ln = Pr, Nd, Gd, Tb, Dy, Ho, and Er) also contain LnII ions, but with 4fn 5d1 configurations (not 4fn+1 5d0). In these 4fn 5d1 complexes, the C 3h-symmetric ligand environment provides a highly shielded 5d-orbital of a′ symmetry that made the 4fn 5d1 electronic configurations lower in energy than the more typical 4fn+1 5d0 configuration.
机译:对于所有镧系元素(不包括Pm),正式包含Ln II 的[K(2.2.2-cryptand)] [Ln(C5H4SiMe3)3]的分离令人惊讶,因为通常+2氧化态被认为是大多数4f元素无法访问的。本文中,使用X射线吸收近边缘光谱(XANES),基态密度泛函理论(DFT)和过渡偶极矩计算来研究Ln(C5H4SiMe3)3 1 – 的可能性(Ln = Pr,Nd,Sm,Gd,Tb,Dy,Y,Ho,Er,Tm,Yb和Lu)化合物代表分子Ln II 配合物。来自基态DFT计算的结果得到了其他计算的支持,这些计算利用具有二阶扰动理论校正(CASPT2)的完全活动空间多配置方法。通过与标准比较,确定Ln(C5H4SiMe3)3 1-(Ln = Sm,Tm,Yb,Lu,Y)包含4f 6 5d 0 (Sm II ),4f 13 5d 0 (Tm II ),4f 14 5d 0 (Yb II ),4f 14 5d 1 (Lu II )和4d 1 (Y II )电子配置。此外,我们的结果表明Ln(C5H4SiMe3)3 1-(Ln = Pr,Nd,Gd,Tb,Dy,Ho和Er)也包含Ln II 离子,但配置为4f n 5d 1 (不是4f n + 1 5d 0 )。在这些4f n 5d 1 配合物中,C 3h 对称配体环境提供了高度屏蔽的a'对称5d轨道,从而使4f n 5d 1 电子配置的能耗低于更典型的4f n + 1 5d 0 配置。

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