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Enhancing photo-reduction quantum efficiency using quasi-type II core/shell quantum dots

机译:使用准II型核/壳量子点提高光还原量子效率

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摘要

Quantum confined semiconductor nanocrystals have emerged as a new class of materials for light harvesting and charge separation applications due to the ability to control their properties through rational design of their size, shape and composition. We report here a study of enhancing the quantum yield of methyl viologen (MV2+) photoreduction using colloidal quasi-type II CdSe/CdS core/shell quantum dots (QDs). The steady-state quantum yield of MV+˙ radical generation, in the presence of thiols as sacrificial donors, increased monotonically with the CdS shell thickness within the studied thickness regime (0–4.7 CdS monolayers). Using ultrafast transient absorption and time-resolved photoluminescence decay spectroscopy, we found that both the rates of electron transfer from the QD to MV2+ and the subsequent charge recombination in QD+–MV+˙ complexes decreased exponentially with the shell thickness, consistent with calculated 1S electron and hole densities at the QD surfaces, respectively. Interestingly, the hole transfer rate remained relatively independent of shell thickness, likely due to a cancellation of the reduction of hole transfer coupling strength with the increased number of hole acceptor ligands on the QD surface at larger shell thickness. As a result, with increasing CdS shell thickness, the charge recombination loss decreases, enhancing the photoreduction quantum efficiency. This novel approach for improving photoreduction quantum efficiency should be applicable to many type II and quasi-type II core/shell quantum dots.
机译:由于能够通过合理设计尺寸,形状和成分来控制其性能,量子限制的半导体纳米晶体已经成为一种用于光收集和电荷分离应用的新型材料。我们在这里报告了一项使用胶体准II型CdSe / CdS核/壳量子点(QDs)增强甲基紫精(MV 2 + )光还原的量子产率的研究。在所研究的厚度范围内(0-4.7 CdS单层),在有硫醇作为牺牲供体的情况下,MV + ˙自由基产生的稳态量子产率随CdS壳厚度的增加而单调增加。利用超快瞬态吸收和时间分辨光致发光衰减光谱,我们发现电子从QD转移到MV 2 + 的速率以及随后在QD + 中的电荷重组–MV + ˙配合物随壳层厚度呈指数下降,分别与在QD表面计算的1S电子和空穴密度一致。有趣的是,空穴传输速率保持相对不依赖于壳的厚度,这可能是由于在较大壳厚度下,随着QD表面上空穴受体配体数量的增加抵消了空穴传输耦合强度的降低。结果,随着CdS壳厚度的增加,电荷复合损失减小,从而提高了光还原量子效率。这种提高光还原量子效率的新颖方法应该适用于许多II型和准II型核/壳量子点。

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