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A polymer acceptor with an optimal LUMO energy level for all-polymer solar cells

机译:适用于全聚合物太阳能电池的具有最佳LUMO能级的聚合物受体

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摘要

A key parameter for polymer electron acceptors is the lowest unoccupied molecular orbital (LUMO) energy level (ELUMO). For state-of-the-art polymer electron acceptors based on the naphthalene diimide (NDI) unit, their ELUMO are low-lying and cannot be tuned, leading to a low open-circuit voltage (Voc) of the resulting all-polymer solar cells (all-PSCs). We report that polymer electron acceptors based on the double B←N bridged bipyridine (BNBP) unit exhibit tunable ELUMO because of their delocalized LUMOs over polymer backbones. The ELUMO of the copolymer of the BNBP unit and selenophene unit (>P-BNBP-Se) is lower by 0.16 eV than that of the copolymer of the BNBP unit and thiophene unit (>P-BNBP-T). As a result, the energy levels of >P-BNBP-Se match well with the widely-used polymer donor, poly[(ethylhexyl-thiophenyl)-benzodithiophene-(ethylhexyl)-thienothiophene] (>PTB7-Th). The electron mobility of >P-BNBP-Se (μe = 2.07 × 10–4 cm2 V–1 s–1) is also higher than that of >P-BNBP-T (μe = 7.16 × 10–5 cm2 V–1 s–1). While the all-PSC device based on the >PTB7-Th:>P-BNBP-T blend shows a moderate power conversion efficiency (PCE) of 2.27%, the corresponding device with >P-BNBP-Se as the acceptor exhibits a PCE as high as 4.26%. Moreover, owing to the suitable ELUMO of >P-BNBP-Se, the all-PSC device of >P-BNBP-Se shows a Voc up to 1.03 V, which is higher by 0.22 V than that with the conventional NDI-based polymer acceptor. These results indicate that BNBP-based polymers can give all-PSCs with high PCEs, remarkably high Voc values and small photon energy losses.
机译:聚合物电子受体的关键参数是最低的未占据分子轨道(LUMO)能级(ELUMO)。对于基于萘二酰亚胺(NDI)单元的最新聚合物电子受体,其ELUMO处于低位且无法调节,从而导致所得全聚合物太阳能电池的低开路电压(Voc)单元(所有PSC)。我们报道基于双B←N桥联吡啶(BNBP)单元的聚合物电子受体表现出可调谐的ELUMO,因为它们在聚合物主链上的离域LUMOs。 BNBP单元和硒烯单元(> P-BNBP-Se )的ELUMO比BNBP单元和噻吩单元(> P-BNBP)的ELUMO低0.16 eV -T )。结果,> P-BNBP-Se 的能级与广泛使用的聚合物供体聚[(乙基己基-噻吩基)-苯并二噻吩-(乙基己基)-噻吩并噻吩](> PTB7-Th )。 > P-BNBP-Se 的电子迁移率(μe= 2.07×10 –4 cm 2 V –1 s –1 )也高于> P-BNBP-T (μe= 7.16×10 –5 cm 2 < / sup> V –1 s –1 )。基于> PTB7-Th :> P-BNBP-T 的全PSC设备显示中等的功率转换效率(PCE)为2.27%,而相应的设备具有> P-BNBP-Se 作为受体表现出的PCE高达4.26%。此外,由于> P-BNBP-Se 的合适ELUMO,> P-BNBP-Se 的全PSC器件显示的Voc高达1.03 V,这是更高的与常规的基于NDI的聚合物受体相比,其电导率降低了0.22V。这些结果表明,基于BNBP的聚合物可以使全PSC具有较高的PCE,非常高的Voc值和较小的光子能量损失。

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