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Integrated spectral photocurrent density and reproducibility analyses of excitonic ZnO/NiO heterojunction

机译:激子ZnO / NiO异质结的综合光谱光电流密度和重现性分析

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摘要

In this data article, the excitonic ZnO/NiO heterojunction device (Patel et al., 2017) was measured for the integrated photocurrent density and reproducibility. Photograph of the prepared devices of ZnO/NiO on the FTO/glass is presented. Integrated photocurrent density as a function of photon energy from the sunlight is presented. Quantum efficiency measurement system (McScienceK3100, Korea) compliance with International Measurement System was employed to measure ZnO/NIO devices. These data are shown for the 300–440 nm of segment of the sunlight (AM1.5G, ). Reproducibility measure of ZnO/NiO device was presented for nine devices with the estimated device performance parameters including the open circuit voltage, short circuit current density, fill factor and power conversion efficiency.
机译:在此数据文章中,测量了激子ZnO / NiO异质结器件(Patel等人,2017)的集成光电流密度和可再现性。呈现了在FTO /玻璃上制备的ZnO / NiO器件的照片。提出了积分的光电流密度与来自太阳光的光子能量的关系。采用符合国际测量系统的量子效率测量系统(韩国,McScienceK3100)来测量ZnO / NIO器件。这些数据显示在300-440 nm的日光范围内(AM1.5G,)。提出了针对九种器件的ZnO / NiO器件的再现性度量,并估计了器件的性能参数,包括开路电压,短路电流密度,填充系数和功率转换效率。

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