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Linearized Programming of Memristors for Artificial Neuro-Sensor Signal Processing

机译:用于人工神经传感器信号处理的忆阻器的线性化编程

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摘要

A linearized programming method of memristor-based neural weights is proposed. Memristor is known as an ideal element to implement a neural synapse due to its embedded functions of analog memory and analog multiplication. Its resistance variation with a voltage input is generally a nonlinear function of time. Linearization of memristance variation about time is very important for the easiness of memristor programming. In this paper, a method utilizing an anti-serial architecture for linear programming is proposed. The anti-serial architecture is composed of two memristors with opposite polarities. It linearizes the variation of memristance due to complimentary actions of two memristors. For programming a memristor, additional memristor with opposite polarity is employed. The linearization effect of weight programming of an anti-serial architecture is investigated and memristor bridge synapse which is built with two sets of anti-serial memristor architecture is taken as an application example of the proposed method. Simulations are performed with memristors of both linear drift model and nonlinear model.
机译:提出了一种基于忆阻器的神经权重的线性规划方法。忆阻器因其内嵌的模拟存储器和模拟乘法功能而被称为实现神经突触的理想元件。其电阻随电压输入的变化通常是时间的非线性函数。关于时间的忆阻变化的线性化对于忆阻器编程的简便性非常重要。本文提出了一种利用反串行架构进行线性规划的方法。反串行架构由两个极性相反的忆阻器组成。由于两个忆阻器的互补作用,它使忆阻的变化线性化。为了对忆阻器进行编程,采用了极性相反的附加忆阻器。研究了反序列结构权重编程的线性化效果,并以两套反序列忆阻器体系结构构建的忆阻桥突触为例。使用线性漂移模型和非线性模型的忆阻器进行仿真。

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