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Tunable near-infrared epsilon-near-zero and plasmonic properties of Ag-ITO co-sputtered composite films

机译:Ag-ITO共溅射复合薄膜的可调谐近红外ε-近零和等离子体特性

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摘要

Series of co-sputtered silver-indium tin oxide (Ag-ITO) films are systematically fabricated. By tuning the atomic ratio of silver, composite films are manifested to have different microstructures with limited silver amount (<3 at.%). Two stages for film morphology changing are proposed to describe different status and growth mechanisms. The introduction of silver improves the preferred orientations of In2O3 component significantly. Remarkably, dielectric permittivity of Ag-ITO films is highly adjustable, allowing the cross-over wavelengths λ c to be changed by more than 300 nm through rapid post-annealing, and thus resulting in tunable epsilon-near-zero and plasmonic properties in the near-infrared region. Lower imaginary permittivity compared with pure metal films, as well as larger tunability in λ c than pure ITO films suggest the potentiality of Ag-ITO films as substituted near-infrared plasmonic materials. Extended Maxwell-Garnett model is applied for effective medium approximation and the red-shifting of epsilon-near-zero region with the increase of silver content is well-fitted. Angle-variable prism coupling is carried out to reveal the surface plasmon polariton features of our films at optical communication wavelength. Broad dips in reflectance curves around 52–56° correspond to the SPP in Ag-ITO films.
机译:系统地制造了一系列的共溅射银铟锡氧化物(Ag-ITO)膜。通过调节银的原子比,可以证明复合膜具有有限的银含量(<3 at。%)的不同微结构。提出了膜形态变化的两个阶段来描述不同的状态和生长机理。银的引入显着改善了In 2 O 3组分的优选取向。值得注意的是,Ag-ITO膜的介电常数是高度可调的,通过快速的后退火可以使交叉波长λc改变300纳米以上,从而导致可调谐的ε接近零和等离子体性质。近红外区。与纯金属膜相比,较低的虚构介电常数以及在λc中的可调谐性都比纯ITO膜高,这表明Ag-ITO膜作为取代的近红外等离子体材料的潜力。扩展的Maxwell-Garnett模型用于有效的介质近似,并且随着银含量的增加,ε接近零的区域发生了红移。进行角度可变的棱镜耦合以揭示我们的膜在光通信波长下的表面等离子体激元极化特征。反射率曲线在52-56°左右的宽幅下降对应于Ag-ITO膜中的SPP。

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