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Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics

机译:自旋和波谷电子学的铁磁半导体异质结构的Van der Waals工程

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摘要

The integration of magnetic material with semiconductors has been fertile ground for fundamental science as well as of great practical interest toward the seamless integration of information processing and storage. We create van der Waals heterostructures formed by an ultrathin ferromagnetic semiconductor CrI3 and a monolayer of WSe2. We observe unprecedented control of the spin and valley pseudospin in WSe2, where we detect a large magnetic exchange field of nearly 13 T and rapid switching of the WSe2 valley splitting and polarization via flipping of the CrI3 magnetization. The WSe2 photoluminescence intensity strongly depends on the relative alignment between photoexcited spins in WSe2 and the CrI3 magnetization, because of ultrafast spin-dependent charge hopping across the heterostructure interface. The photoluminescence detection of valley pseudospin provides a simple and sensitive method to probe the intriguing domain dynamics in the ultrathin magnet, as well as the rich spin interactions within the heterostructure.
机译:磁性材料与半导体的集成为基础科学奠定了沃土,并且对信息处理和存储的无缝集成具有极大的实际意义。我们创建了由超薄铁磁半导体CrI3和WSe2单层形成的范德华异质结构。我们观察到WSe2中自旋和谷假自旋的空前控制,在这里我们检测到近13 T的大磁场交换,并通过翻转CrI3磁化强度快速切换WSe2谷分裂和极化。 WSe2的光致发光强度在很大程度上取决于WSe2中的光激发自旋和CrI3磁化强度之间的相对排列,这是因为跨异质结构界面的超快自旋相关电荷跳跃。谷假自旋的光致发光检测提供了一种简单而灵敏的方法来探测超薄磁体中有趣的畴动力学以及异质结构内的丰富自旋相互作用。

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