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Contribution of hydrophobic and electrostatic interactions to the membrane integration of the Shaker K+ channel voltage sensor domain

机译:疏水和静电相互作用对Shaker K +通道电压传感器域的膜整合的贡献

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摘要

Membrane-embedded voltage-sensor domains in voltage-dependent potassium channels (Kv channels) contain an impressive number of charged residues. How can such highly charged protein domains be efficiently inserted into biological membranes? In the plant Kv channel KAT1, the S2, S3, and S4 transmembrane helices insert cooperatively, because the S3, S4, and S3–S4 segments do not have any membrane insertion ability by themselves. Here we show that, in the Drosophila Shaker Kv channel, which has a more hydrophobic S3 helix than KAT1, S3 can both insert into the membrane by itself and mediate the insertion of the S3–S4 segment in the absence of S2. An engineered KAT1 S3–S4 segment in which the hydrophobicity of S3 was increased or where S3 was replaced by Shaker S3 behaves as Shaker S3–S4. Electrostatic interactions among charged residues in S2, S3, and S4, including the salt bridges between E283 or E293 in S2 and R368 in S4, are required for fully efficient membrane insertion of the Shaker voltage-sensor domain. These results suggest that cooperative insertion of the voltage-sensor transmembrane helices is a property common to Kv channels and that the degree of cooperativity depends on a balance between electrostatic and hydrophobic forces.
机译:电压依赖性钾通道(Kv通道)中的膜嵌入式电压传感器域包含大量的带电残基。如此高电荷的蛋白质结构域如何有效地插入生物膜?在植物Kv通道KAT1中,S2,S3和S4跨膜螺旋协同插入,因为S3,S4和S3-S4片段本身没有任何膜插入能力。在这里,我们表明,在果蝇振荡器Kv通道中,其S3螺旋比KAT1疏水,S3既可以自身插入膜中,又可以在不存在S2的情况下介导S3–S4节段的插入。经过工程改造的KAT1 S3–S4片段,其中S3的疏水性增加或被S3摇床取代,S3的行为与S3–S4摇床相同。 S2,S3和S4中带电残基之间的静电相互作用,包括S2中E283或E293与S4中R368之间的盐桥,对于Shaker电压传感器结构域的高效膜插入是必需的。这些结果表明,电压传感器跨膜螺旋的协同插入是Kv通道共有的属性,并且协同作用的程度取决于静电力和疏水力之间的平衡。

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