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Broken symmetry and critical transport properties of random metals

机译:随机金属的对称性和临界传输性质

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摘要

Recent experimental data on the conductivity σ+(T), T → 0, on the metallic side of the metal–insulator transition in ideally random (neutron transmutation-doped) 70Ge:Ga have shown that σ+(0) ∝ (N − Nc)μ with μ = ½, confirming earlier ultra-low-temperature results for Si:P. This value is inconsistent with theoretical predictions based on diffusive classical scaling models, but it can be understood by a quantum-directed percolative filamentary amplitude model in which electronic basis states exist which have a well-defined momentum parallel but not normal to the applied electric field. The model, which is based on a new kind of broken symmetry, also explains the anomalous sign reversal of the derivative of the temperature dependence in the critical regime.
机译:在理想的随机(掺杂中子) 70 Ge:Ga中,金属-绝缘体跃迁的金属侧的电导率σ+(T),T→0的最新实验数据表明,σ +(0)∝(N-Nc)μ,μ=½,证实了Si:P的早期超低温结果。该值与基于扩散经典比例模型的理论预测不一致,但是可以通过量子定向的渗透性丝状振幅模型来理解,该模型中存在电子基态,其电势平行于但不垂直于所施加的电场。该模型基于一种新型的打破对称性,还解释了临界状态下温度依赖性导数的反常符号反转。

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