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Galvanic-Cell-Reaction-Driven Deposition of Large-Area Au Nanourchin Arrays for Surface-Enhanced Raman Scattering

机译:用于表面增强拉曼散射的大面积金纳米管阵列的电-池-反应驱动沉积

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摘要

Here we report a low-cost synthetic approach for the direct fabrication of large-area Au nanourchin arrays on indium tin oxide (ITO) via a facile galvanic-cell-reaction-driven deposition in an aqueous solution of chloroauric acid and poly(vinyl pyrrolidone) (PVP). The homogeneous Au nanourchins are composed of abundant sharp nanotips, which can served as nanoantennas and increase the local electromagnetic field enhancement dramatically. Finite element theoretical calculations confirm the strong electromagnetic field can be created around the sharp nanotips and located in the nanogaps between adjacent tips of the Au nanourchins. In addition, the interparticle nanogaps between the neighboring Au nanourchins may create additional hotspots, which can induce the higher electromagnetic field intensity. By using rhodamine 6G as a test molecule, the large-area Au nanourchin arrays on ITO exhibit active, uniform, and reproducible surface-enhanced Raman scattering (SERS) effect. To trial their practical application, the Au nanourchin arrays are utilized as SERS substrates to detect 3,3’,4,4’-tetrachlorobiphenyl (PCB-77) one congener of polychlorinated biphenyls (PCBs) as a notorious class of persistent organic pollutants. The characteristic Raman peaks can be still identified when the concentration of PCB-77 is down to 5 × 10−6 M.
机译:在这里,我们报告了一种低成本的合成方法,该方法可通过在氯金酸和聚乙烯吡咯烷酮的水溶液中进行简便的原电池反应驱动沉积,在氧化铟锡(ITO)上直接制造大面积的Au纳米顽皮阵列。 )(PVP)。均匀的金纳米胆由丰富的尖锐的纳米尖端组成,可以用作纳米天线并显着提高局部电磁场的增强。有限元理论计算证实,可以在尖锐的纳米尖端周围产生强电磁场,并且该电磁场位于Au纳米顽皮的相邻尖端之间的纳米间隙中。另外,相邻的金纳米顽皮之间的粒子间纳米间隙可能会产生额外的热点,从而引起更高的电磁场强度。通过使用罗丹明6G作为测试分子,ITO上的大面积Au纳米urchin阵列表现出活性,均匀且可重现的表面增强拉曼散射(SERS)效果。为了测试其实际应用,金纳米管阵列用作SERS底物,以检测3,3’,4,4’-四氯联苯(PCB-77)多氯联苯(PCB)的同类之一,它是一类臭名昭著的持久性有机污染物。当PCB-77的浓度降至5×10 -6 M时,仍可以识别出特征性的拉曼峰。

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