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Nanoporous Structure Formation on the Surface of InSb by Ion Beam Irradiation

机译:离子束辐照在InSb表面形成纳米孔结构

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摘要

Nanoporous structures have a great potential for application in electronic and photonic materials, including field effect transistors, photonic crystals, and quantum dots. The control of size and shape is important for such applications. In this study, nanoporous structure formation on the indium antimonide (InSb) surface was investigated using controlled focused ion beam irradiation. Upon increasing the ion dose, the structures grew larger, and the shapes changed from voids to pillars. The structures also became larger when the ion flux (high-dose) and accelerating voltage were increased. The structure grew obliquely on the substrate by following the ion beam irradiation of 45°. The shapes of the structures formed by superimposed ion beam irradiation were affected by primary irradiation conditions. The nanostructural features on the InSb surface were easy to control by changing the ion beam conditions.
机译:纳米多孔结构在电子和光子材料中具有巨大的潜力,包括场效应晶体管,光子晶体和量子点。尺寸和形状的控制对于此类应用很重要。在这项研究中,使用受控聚焦离子束辐照研究了锑化铟(InSb)表面纳米孔结构的形成。随着离子剂量的增加,结构变大,形状从空隙变为柱状。当离子通量(大剂量)和加速电压增加时,结构也变大。通过45°的离子束照射,该结构在基板上倾斜地生长。通过叠加离子束辐照形成的结构的形状受初始辐照条件的影响。通过改变离子束条件,可以轻松控制InSb表面的纳米结构特征。

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