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Amorphous Silicon Carbide Platform for Next Generation Penetrating Neural Interface Designs

机译:用于下一代穿透神经接口设计的非晶碳化硅平台

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摘要

Microelectrode arrays that consistently and reliably record and stimulate neural activity under conditions of chronic implantation have so far eluded the neural interface community due to failures attributed to both biotic and abiotic mechanisms. Arrays with transverse dimensions of 10 µm or below are thought to minimize the inflammatory response; however, the reduction of implant thickness also decreases buckling thresholds for materials with low Young’s modulus. While these issues have been overcome using stiffer, thicker materials as transport shuttles during implantation, the acute damage from the use of shuttles may generate many other biotic complications. Amorphous silicon carbide (a-SiC) provides excellent electrical insulation and a large Young’s modulus, allowing the fabrication of ultrasmall arrays with increased resistance to buckling. Prototype a-SiC intracortical implants were fabricated containing 8 - 16 single shanks which had critical thicknesses of either 4 µm or 6 µm. The 6 µm thick a-SiC shanks could penetrate rat cortex without an insertion aid. Single unit recordings from SIROF-coated arrays implanted without any structural support are presented. This work demonstrates that a-SiC can provide an excellent mechanical platform for devices that penetrate cortical tissue while maintaining a critical thickness less than 10 µm.
机译:由于归因于生物和非生物机制的故障,在长期植入条件下能够持续可靠地记录和刺激神经活动的微电极阵列至今仍未出现在神经接口领域。认为横向尺寸为10 µm或以下的阵列可最大程度地减少炎症反应。但是,对于杨氏模量低的材料,植入物厚度的减小也会降低屈曲阈值。尽管在植入过程中使用更硬,更厚的材料作为运输工具克服了这些问题,但使用运输工具造成的严重损害可能会导致许多其他生物并发症。非晶碳化硅(a-SiC)提供出色的电绝缘性和大的杨氏模量,从而允许制造超小型阵列,并具有增强的抗屈曲性。制造的原型a-SiC皮质内植入物包含8至16个单柄,其临界厚度为4 µm或6 µm。 6微米厚的a-SiC柄无需插入辅助工具即可穿透大鼠皮层。展示了在没有任何结构支撑的情况下植入的SIROF涂层阵列的单位记录。这项工作表明,a-SiC可以为穿透皮质组织的设备提供出色的机械平台,同时保持小于10 µm的临界厚度。

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