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Atmospheric Pressure Plasma Polymerization Synthesis and Characterization of Polyaniline Films Doped with and without Iodine

机译:大气压等离子体聚合合成和表征掺杂和不掺杂碘的聚苯胺薄膜

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摘要

Although polymerized aniline (polyaniline, PANI) with and without iodine (I2) doping has already been extensively studied, little work has been done on the synthesis of PANI films using atmospheric pressure plasma (APP) deposition. Therefore, this study characterized pure and I2-doped PANI films synthesized using an advanced APP polymerization system. The I2 doping was conducted ex-situ and using an I2 chamber method following the APP deposition. The pure and I2-doped PANI films were structurally analyzed using field emission scanning electron microscope (FE-SEM), atomic force microscope (AFM), X-ray Diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), and time of flight secondary ion mass spectrometry (ToF-SIMS) studies. When increasing the I2 doping time, the plane and cross-sectional SEM images showed a decrease in the width and thickness of the PANI nanofibers, while the AFM results showed an increase in the roughness and grain size of the PANI films. Moreover, the FT-IR, XPS, and ToF-SIMS results showed an increase in the content of oxygen-containing functional groups and C=C double bonds, yet decrease in the C–N and C–H bonds when increasing the I2 doping time due to the reduction of hydrogen in the PANI films via the I2. To check the suitability of the conductive layer for polymer display applications, the resistance variations of the PANI films grown on the interdigitated electrode substrates were also examined according to the I2 doping time.
机译:尽管已经对带有和不带有碘(I 2)掺杂的聚合苯胺(聚苯胺,PANI)进行了广泛的研究,但是在使用大气压等离子体(APP)沉积合成PANI膜方面所做的工作很少。因此,这项研究表征了使用先进的APP聚合系统合成的纯I2掺杂的PANI膜。在APP沉积之后,使用I2腔室方法在原位进行I2掺杂。使用场发射扫描电子显微镜(FE-SEM),原子力显微镜(AFM),X射线衍射(XRD),傅里叶变换红外光谱(FT-IR),X-射线光电子能谱(XPS)和飞行时间二次离子质谱(ToF-SIMS)研究。当增加I2掺杂时间时,平面和横截面SEM图像显示PANI纳米纤维的宽度和厚度减小,而AFM结果显示PANI膜的粗糙度和晶粒尺寸增加。此外,FT-IR,XPS和ToF-SIMS结果表明,含氧官能团和C = C双键的含量增加,但当增加I2掺杂时,C–N和CH–H键的含量减少由于通过I2减少了PANI膜中的氢,因此时间较长。为了检查导电层对聚合物显示应用的适用性,还根据I2掺杂时间检查了在叉指电极基板上生长的PANI膜的电阻变化。

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