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Nanohardness and Residual Stress in TiN Coatings

机译:TiN涂层的纳米硬度和残余应力

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摘要

TiN films were prepared by the Cathodic arc evaporation deposition method under different negative substrate bias. AFM image analyses show that the growth mode of biased coatings changes from 3D island to lateral when the negative bias potential is increased. Nanohardness of the thin films was measured by nanoindentation, and residual stress was determined using Grazing incidence X ray diffraction. The maximum value of residual stress is reached at −100 V substrate bias coinciding with the biggest values of adhesion and nanohardness. Nanoindentation measurement proves that the force-depth curve shifts due to residual stress. The experimental results demonstrate that nanohardness is seriously affected by the residual stress.
机译:通过阴极电弧蒸发沉积方法在不同的负衬底偏压下制备TiN膜。 AFM图像分析表明,当负偏置电位增加时,偏置涂层的生长模式会从3D岛变为横向。通过纳米压痕测量薄膜的纳米硬度,并使用掠入射X射线衍射确定残余应力。残余应力的最大值在−100 V衬底偏压下达到,这与粘附力和纳米硬度的最大值一致。纳米压痕测量证明力-深度曲线由于残余应力而移动。实验结果表明,纳米硬度受到残余应力的严重影响。

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