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Molecular dynamics simulations of nanoindentation and scratch in Cu grain boundaries

机译:铜晶界中纳米压痕和划痕的分子动力学模拟

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摘要

The dynamic nanomechanical characteristics of Cu films with different grain boundaries under nanoindentation and scratch conditions were studied by molecular dynamics (MD) simulations. The type of grain boundary is the main factor in the control of the substrate atoms with respect to the size of dislocations since the existence of the grain boundary itself restricts the movement associated with dislocations. In this work, we analyzed the transverse and vertical grain boundaries for different angles. From the simulation results, it was found that the sample with a transverse grain boundary angle of 20° had a higher barrier effect on the slip band as compared to samples with other angles. Moreover, the nanoindentation results (i.e., indentation on the upper area) of the vertical grain boundary showed that the force was translated along the grain boundary, thereby producing intergranular fractures.
机译:通过分子动力学模拟研究了纳米压痕和划痕条件下具有不同晶界的铜膜的动态纳米力学特性。相对于位错的大小,晶界的类型是控制衬底原子的主要因素,因为晶界的存在本身限制了与位错相关的运动。在这项工作中,我们分析了不同角度的横向和垂直晶界。从模拟结果发现,与具有其他角度的样品相比,具有20°的横向晶界角的样品对滑带具有更高的阻挡作用。此外,垂直晶界的纳米压痕结果(即,上部区域的压痕)表明力沿晶界平移,从而产生晶间断裂。

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