以磁控溅射法沉积在单晶硅片上的钛薄膜样品为工作电极，以循环伏安法为阳极氧化方式，研究极低电位下钛表面氧化膜的生长与结晶行为。通过AFM、SE和XPS等手段表征钛表面阳极氧化膜的表面形貌、结晶性和化学组成。结果表明，即使在低至1000 mV的电位下，所形成的阳极氧化钛薄膜也是结晶的，而不是无定型的。升高氧化电位或者降低电位扫描速率都有利于钛氧化膜的形成和结晶。认为，在极低的电位下，产生于氧化膜/金属界面的内在压应力是导致钛氧化物结晶形成的主要原因，而不是被研究者们所普遍接受的焦耳热。%Growth and crystallization of titanium anodized films were studied by performing the anodization of the sputter-deposited titanium samples under cyclic voltammetry (CV) mode at very low potentials. The surface features, crystalline behaviors and chemical compositions of the formed anodic oxide layers were detected by AFM, SE and XPS. It was found that the structure of the titanium anodized films is crystalline, even though the maximum oxidation potential (φmax) is very low (as low as 1000 mV). Both enlarging the applied voltage and reducing the potential scanning rate are beneficial for the growth and crystallization of titanium oxide films. It was thought that the internal compressive stress, other than the local joule heating accepted for many researchers, is the main force of stimulating the crystallization of anodic titanium oxide films at very low potentials.
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