Analytical current model of tunneling field-effect transistor considering the impacts of both gate and drain voltages on tunneling

摘要

In this paper, a closed-form current model for bulk tunneling field-effect transistor（TFET） is put forward. Based on the operation mechanism, the channel surface potential φsf which involves the impact of both the gate and the drain voltages is established for the first time. In addition, a new calculation method for the dynamic tunneling width, which is the critical parameter for the TFET modeling, is derived from the surface potential. The surface-potential-based current model is established which is in a good agreement with TCAD simulation results.