Metal-semiconductor-metal ultraviolet photodetector based on GaN

摘要

A metal-semiconductor-metal (MSM) ultraviolet photodetector has been fabricated using unintentionally doped n-GaN films grown on sapphire substrates. Its dark current, photocurrent under the illumination with λ = 360 nm light, responsivity, and the dependence of responsivity on bias voltage were measured at room temperature. The dark current of the photodetector is 1.03 Na under 5 V bias, and is 15.3 Na under 10 V bias. A maximum responsivity of 0.166 A/W has been achieved under the illumination with λ= 366 nm light and 15 V bias. It exhibits a typical sharp band-edge cutoff at the wavelength of 366 nm, and a high responsivity at the wavelength from 320 nm to 366 nm. Its responsivity under the illumination with λ= 360 nm light increases when the bias voltage increases.