Si2N2O标准生成吉布斯自由能的测定

摘要

用两种方法测量了Si2N2O的标准生成吉布斯自由能△fGθSi2N2O:其一是在0.1 MPa氮气压力条件下,在1073～1 869 K范围内,利用Y2O3稳定ZrO2固体电解质,以Cr和Cr2O3为参比电板,用极化法测试；其二是在1 673和1 773 K下通过Ni-NiO平衡控制氧分压法测试.结果表明,两者吻合很好,其表达式可写为:△fGθSi2N2O=- 960.627+ 0.292 T±6.2(kJ· mol-1),其中1 073 K≤T≤1 869 K.%The standard Gibbs free energy of formation for Si2N2O was measured by two methods. The firstrnwas polarization method with 0.1 MPa of nitrogen pressure, 1 073-1 869 K of temperature,yttria stabilizedrnzirconia as solid electrolyte and Cr-Cr2O3 as reference electrode. The second was conducted at 1 673 andrn1 773 K under balanced oxygen partial pressure controlled by Ni-NiO mixture. Two test results coincidernwith each other well and they can be described as ΔfGθS12N2o = -960.627+0.292T±6.2(kJ · mol-1),wherern1 073 K≤T≤ 869 K.