Inhomogeneity of Rare Earth Doped Ⅲ-Ⅴ Compounds Grown by LPE

摘要

The processing of InP, GaAs and related compounds doped with rare earth metals, such as Er, Nd and Gd, grown by LPE isdescribed. The inhomogeneity of rare earth heavily doped epi-layers is studied by SIMS, SEM and X-ray diffraction techniques.