IGBT模块通态电阻与键合线故障关系研究

摘要

绝缘栅双极型晶体管(IGBT)模块通过键合引线实现与外电路的电气连接,并联的铝键合线若发生脱落现象,会导致模块的等效通态电阻增大,通过对电阻的计算,可直接对模块进行故障诊断.通过实验得出IGBT模块通态电压与电流之间的关系曲线,计算出健康与键合线故障状态下的IGBT模块等效通态电阻的变化,并分析得出键合线脱落根数超过总键合线数的40％左右时,IGBT模块发生失效故障.%The insulated gate bipolar transistor(IGBT) modules are electrically connected with the external circuit through the bonding-wires.If the aluminum bonding-wires of the parallel connection are disconnected,the equivalent onresistance of the module will increase.Through the calculation of the resistance,the bonding-wire lift off of IGBT modules can be directly diagnosed.The relationship between on-state voltage and current of the IGBT module is obtained through experiments.The change of the equivalent on-resistance of the IGBT module under the state of health and bonding fault are calculated,and the failure of IGBT module can be concluded when more than 40％ of the total number of bonding-wires are disconnected.