Mutagenesis of Arabidopsis Thaliana by N^+ Ion Implantation

摘要

Ion implantation, as a new biophysically mutagenic technique, has shown a great potential for crop breeding. By analyzing polymorphisms of genomic DNA through RAPD-based DNA analysis, we compared the frequency and efficiency of somatic and germ-line mutations of Arabidopsis thaliana treated with N^+ ion implantation and γ-rays radiation. Our data support the following conclusions: (1) N^+ ion implantation can induce a much wider spectrum of mutations than γ-rays radiation does; (2) Unlike the linear correlation between the doses and their effect in γ-rays radiation, the dose-effect correlation in N^+ ion implantation is nonlinear; (3) Like γ-rays radiation, both somatic and germ-line mutations could be induced by N^+ ion implantation; and (4) RAPD deletion patterns are usually seen in N^+ ion implantation induced mutation.