首页> 中文期刊> 《等离子体科学和技术:英文版》 >Comparative Study on Effects of Low Energy N^+ Implantation and γ-ray Radiation on Heredity and Development of Arabidopsis Thaliana

Comparative Study on Effects of Low Energy N^+ Implantation and γ-ray Radiation on Heredity and Development of Arabidopsis Thaliana

         

摘要

In order to compare the contemporary and genetic variation effect on Arabidopsis thaliana treated with N+ implantation and γ-ray radiation, the authors did some statistical comparison on the germinating rate and the development period, and analyzed the content of soluble proteins, the activity of some enzymes, isoenzymes profile, and along with the variation in genome DNA of two generations by RAPD. With N+ implantation there was an analogical "saddle model" relationship between doses and the plant development, soluble proteins, the activity of some enzymes and isoenzymes profile. A certain connection might exist between the similar dose-effect relations among enzymes activity, isoenzymes profile and content of soluble proteins.Maybe, there also exists a certain connection between the mutants of development period and that of DNA variations, between the hereditability of the effect of N+ implantation on the isoenzymes,the activities of enzymes and the hereditability of DNA variations. So it is presumed that the implanted ions, maybe, have participated in metabolism process of organism including that of genome DNA, to consequently affect vital process, such as the changes of gene structure, gene expression manner and gene repair mechanism, and finally result in mutation on phenotype and molecular level. Furthermore, the results definitely showed that mutagenic mechanism induced by N+ implantation is very complicated and is much different from that induced by traditional γ-ray radiation.

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