Dimensionally correct and directly traceable measurement is not feasible with conventional scanning tunneling microscopy (STMs) due to severe hysteresis and non-linearity of the commonly applied piezo tube scanners and the very short range. By integrating a custom made probing system based on tunneling current measurement into a commercially available and laser-interferometrically position controlled positioning system, an STM with a principal measuring
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机译:利用扫描穿隧显微镜探讨在硒化铟上未氧化表面和氧化表面之介面接合处的电子特性 =Scanning Tunneling Microscope study of InSe Surface Electronic Properties at the Fresh/Oxided Interface Junction