锗基石墨烯能带加工:锰合金化插层

摘要

[Background] It is essential to introduce a bandgap in graphene or its heterojunctions in the field of band engineering. [Purpose] This study aims to intercalate two-dimensional Mn-Ge alloy island between graphene and the Ge(110) substrate and modify the electronic state of graphene. [Methods] The atomic structure and low-energy electronic excitation were studied by scanning tunneling microscopy (STM). [Results] We found one-dimensional nanowires and two-dimensional planar islands in samples with different graphene coverage. Without graphene protection, two-dimensional alloy islands can grow into three-dimensional wedges. The intercalation of one-dimensional nanowires and two-dimensional planar islands opens an energy gaps of 400 meV and 200 meV respectively. [Conclusions] Mn is intercalated to the graphene/Ge(110) through the edge of the graphene island by alloying with germanium. The open energy gap provides a feasible method for engineering the band structure of graphene.%在石墨烯或其异质结中引入带隙是石墨烯能带工程研究的重要课题.借助合金化的方法在石墨烯和锗[Ge(110)]衬底之间成功插入二维Mn-Ge合金岛,并对此异质结构开展微观原子结构及低能电子激发的扫描隧道显微学研究.在不同石墨烯覆盖度的样品中,发现了一维纳米线和二维平板合金岛插层,在缺乏石墨烯保护的合金表面,二维合金岛可以恢复三维生长.Mn-Ge合金纳米线和二维岛插层使石墨烯分别打开了400 meV和200 meV的能隙,为改变石墨烯的能带结构提供了可行的方法.