Institute of Modern Physics;
Chinese Academy of Sciences;
Lanzhou 730000;
China;
Department of Computer Science and Technology;
Tsinghua University;
Beijing 100084;
China;
School of Nuclear Science and Technology;
University of Chinese Academy of Sciences;
Beijing 100049;
China;
Double interlocked storage cell(DICE); Error detection and correction(EDAC)code; Heavy ion; Radiation hardening technology; Single event upset(SEU); Static random-access memory(SRAM);